Typical Performance Characteristics
Top :
V GS
15.0 V
10
10
10
10
2
1
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
2
1
150 ℃
25 ℃
-55 ℃
10
10
0
※ Notes :
1. 250 μ s Pulse Test
2. T C = 25 ℃
0
※ Note
1. V DS = 40V
2. 250 μ s Pulse Test
10
10
10
-1
0
1
2
4
6
8
10
10
V DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.20
0.15
2
V GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
V GS = 10V
0.10
1
V GS = 20V
150 ℃
25 ℃
0.05
※ Notes :
10
※ Note : T J = 25 ℃
0
1. V GS = 0V
2. 250 μ s Pulse Test
0.00
0
20
40
60
80
100
120
140
160
180
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
30000
V SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
25000
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
10
V DS = 100V
V DS = 250V
V DS = 400V
20000
15000
C oss
※ Notes :
8
6
10000
5000
C iss
C rss
1. V GS = 0 V
2. f = 1 MHz
4
2
※ Note : I D = 47A
10
10
10
0
-1
0
1
0
0
50
100
150
200
250
V DS , Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Q G , Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
?2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C2
3
www.fairchildsemi.com
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